Infiltration of Reaction-Bonded Silicon Nitride with Equilibrium Y-Si-O-N Melt

نویسنده

  • Tzer-Shin Sheu
چکیده

An equilibrium Y-Si-0-N melt was infiltrated to eliminate the open porosity of reaction-bonded silicon nitride at 16001800°C. This oxynitride melt contained two equilibrium phases, a P-Si,N, solid phase and a liquid phase at high temperatures. Before infiltration, porous reaction-bonded silicon nitride compacts were heat-treated to completely transform to the P-Si3N, phase. After infiltration, the flexural strength of the reaction-bonded silicon nitride material increased from 200 to 600 MPa at 25"C, from 200 to 300 MPa at 1400°C in air.

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تاریخ انتشار 2005